Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs

Hysteresis in Experimental I–V Curves of Electron Hop Funnels

A Simple General-purpose I-V Model for All Operating Modes of Deep Submicron MOSFETs

A simple general-purpose I-V model for all operating modes of deep-submicron MOSFETs is presented. Considering the most dominant short channel effects with simple equations including few extra parameters, a reasonable trade-off between simplicity and accuracy is established. To further improve the accuracy, model parameters are optimized over various channel widths and full range of operating v...

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast I–V Techniques

Threshold voltage and drain current instabilities in state-of-the-art 4H-SiC MOSFETs with thermal as-grown SiO2 and NO-annealed gate oxides have been studied using fast I–V measurements. These measurements reveal the full extent of the instability underestimated by dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. Postoxidation an...

مطالعه مشخصات i-v و c-v دیود شاتکی تهیه شده از کوپلیمرهای هتروسیکل

چکیده ندارد.

Numerical and experimental hydrodynamic analysis of catamaran with and without V-like center bow

Catamaran added V-like center bow (INCAT) is investigated as a wave-piercing vessel to decrease vertical acceleration and diminish slam events during sea-keeping operation. The catamaran and the vessel bow were modeled and the vertical acceleration of model was validated with experimenal test. The geometry of V-like center-bow such as slope of center bow and elevation from demi-hulls was optimi...